? 2004 ixys all rights reserved v ces = 1700 v i c25 = 32 a v ce(sat) = 5.0 v t fi(typ) = 50 ns ixgh 32n170a ixgt 32n170a c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features z international standard packages jedec to-268 and jedec to-247 ad z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds98942d(09/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c50 a v ge = 0 v note 1 t j = 125 c2ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v t j = 25 c 4.0 5.0 v t j = 125 c 4.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c32a i c90 t c = 90 c21a i cm t c = 25 c, 1 ms 110 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 ? i cm = 70 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 10 ? 10 s p c t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) (to-247) 1.13/10nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g to-268 4 g to-268 (ixgt) g e high voltage igbt c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i 90 ; v ce = 10 v 16 26 s note 2 c ies 3700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 180 pf c res 43 pf q g 155 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 28 nc q gc 49 nc t d(on) 46 ns t ri 57 ns t d(off) 260 500 ns t fi 50 100 ns e off 1.5 2.6 mj t d(on) 48 ns t ri 59 ns e on 4.0 mj t d(off) 300 ns t fi 70 ns e off 2.4 mj r thjc 0.35 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c25 , v ge = 15 v r g = 2.7 ?, v ce = 0.5 v ces note 3 inductive load, t j = 25 c i c = i c25 , v ge = 15 v r g = 2.7 ?, v ce = 0.5 v ces note 3 ixgh 32n170a ixgt 32n170a to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g .
? 2004 ixys all rights reserved ixgh 32n170a ixgt 32n170a fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10121416 1820 v c e - volts i c - amperes v ge = 17v 7v 9v 11v 13v 15v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 012345678910 v ce - volts i c - amperes v ge = 17v 15v 13v 11v 9v 7v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0123456789 v c e - volts i c - amperes v ge = 17v 15v 13v 11v 9v 7v fig. 4. dependence of v ce(sat) on temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 21a i c = 10.5a v ge = 15v i c = 42a fig. 5. collector-to-em itter voltage vs. gate-to-emiiter voltage 2 3 4 5 6 7 8 9 10 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 42a 21a 10.5a fig. 6. input adm ittance 0 10 20 30 40 50 60 70 80 456 789 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixgh 32n170a ixgt 32n170a fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 102030 4050607080 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 11. gate charge 0 3 6 9 12 15 0 30 60 90 120 150 q g - nanocoulombs v g e - volts v ce = 850v i c = 21a i g = 10ma fig. 12. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 8. dependence of e off on r g 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 r g - ohms e off - millijoules i c = 16a t j = 125oc v ge = 15v v ce = 850v i c = 32a i c = 64a fig. 9. dependence of e off on i c 0 1 2 3 4 5 6 16 24 32 40 48 56 64 i c - amperes e off - millijoules r g = 3 ? r g = 15 ? - - - - - v ge = 15v v ce = 850v t j = 125oc t j = 25oc fig. 10. dependence of e off on temperature 0 1 2 3 4 5 6 7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 64a v ge = 15v v ce = 850v r g = 3 ? r g = 15 ? - - - - - i c = 32a i c = 16a
? 2004 ixys all rights reserved ixgh 32n170a ixgt 32n170a fig. 13. maximum transient thermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w)
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